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? semiconductor components industries, llc, 2015 march, 2015 ? rev. 3 1 publication order number: kaf ? 3200/d kaf-3200 2184 (h) x 1472 (v) full frame ccd image sensor description the kaf ? 3200 image sensor is a high performance ccd (charge ? coupled device) with 2184 (h) x 1472 (v) photoactive pixels designed for a wide range of image sensing applications. the sensor incorporates true two ? phase ccd technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. the sensor also utilizes the truesense transparent gate electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. table 1. general specifications parameter typical value architecture full frame ccd total number of pixels 2184 (h) x 1510 (v) number of active pixels 2184 (h) x 1472 (v) pixel size 6.8 m (h) x 6.8 m (v) active imager size 14.85 mm (h) x 10.26 mm (v) 18 mm (diag), 4/3? optical format optical fill ? factor 100% saturation signal 55,000 electrons output sensitivity 12 v/e ? readout noise (1 mhz) 7 electrons rms dark current (25 c, accumulation mode) < 7 pa/cm 2 dark current doubling rate 6 c dynamic range (sat sig / dark noise) 78 db quantum efficiency with microlenses (red, green, blue) 55%, 70%, 80% maximum data rate 15 mhz package cerdip package (sidebrazed) cover glass clear or ar coated, 2 sides note: parameters above are specified at t = 25 c unless otherwise noted. www.onsemi.com figure 1. kaf ? 3200 ccd image sensor features ? true two phase full frame architecture ? truesense transparent gate electrode for high sensitivity ? 100% fill factor ? low dark current ? microlenses ? high output sensitivity applications ? medical imaging ? scientific imaging see detailed ordering and shipping information on page 2 of this data sheet. ordering information
kaf ? 3200 www.onsemi.com 2 ordering information table 2. ordering information part number description marking code kaf ? 3200 ? aba ? cd ? b2 monochrome, telecentric microlens, cerdip package (sidebrazed), clear cover glass with ar coating (both sides), grade 2 kaf ? 3200 ? aba (serial number) kaf ? 3200 ? aba ? cd ? ae monochrome, telecentric microlens, cerdip package (sidebrazed), clear cover glass with ar coating (both sides), engineering sample kaf ? 3200 ? aba ? cp ? b2 monochrome, telecentric microlens, cerdip package (sidebrazed), taped clear cover glass, no coatings, grade 2 kaf ? 3200 ? aba (serial number) kaf ? 3200 ? aba ? cp ? ae monochrome, telecentric microlens, cerdip package (sidebrazed), taped clear cover glass, no coatings, engineering sample kaf ? 3200 ? 12 ? 5 ? a ? evk evaluation board (complete kit) n/a see the on semiconductor device nomenclature document (tnd310/d) for a full description of the naming convention used for image sensors. for reference documentation, including information on evaluation kits, please visit our web site at www.onsemi.com.
kaf ? 3200 www.onsemi.com 3 device description architecture figure 2. block diagram 2184 active pixels/line 34 dark 8 invalid vrd vdd vout vss sub vog 2 invalid 34 dark line 4 dark line vlg = scavanging ccds to reduce edge artifacts 1 active(cte monitor) 3 invalid 34 dark 1 active(cte monitor) kaf ? 3200 usable active area: 2184(h) x 1472(v) ? r ? h1 ? h2 ? v1 ? v2 6.8 m x 6.8 m pixels the sensor is built with a true two ? phase ccd technology employing a transparent gate and with microlenses available. this technology simplifies the support circuits that drive the sensor and reduces the dark current without compromising charge capacity. the transparent gate results in spectral response increased ten times at 400 nm, compared to a front side illuminated standard poly silicon gate technology. the micro lenses are an integral part of each pixel and cause most of the light to pass through the transparent gate half of the pixel, further improving the spectral sensitivity. the photoactive area is 14.85 mm x 10.26 mm and is housed in a 24 pin, dual in line (dip) package with 0.1? pin spacing. the sensor consists of 2254 parallel (vertical) ccd shift registers each 1510 elements long. these registers act as both the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the sensor. the parallel (vertical) ccd registers transfer the image one line at a time into a single 2267 element (horizontal) ccd shift register. the horizontal register transfers the charge to a single output amplifier. the output amplifier is a two ? stage source follower that converts the photo ? generated charge to a voltage for each pixel. dark reference pixels at the beginning of each line are 34 light shielded pixels. there are also 34 full dark lines at the start of every frame and 4 full dark lines at the end of each frame. under normal circumstances, the pixels in these dark lines do not respond to light. however, dark reference pixels in close proximity to an active pixel, (including the 2 full dark lines and one column at end of each line), can scavenge signal depending on light intensity and wavelength and therefore will not represent the true dark signal. output structure charge presented to the floating diffusion (fd) is converted into a voltage and current amplified in order to drive off ? chip loads. the resulting voltage change seen at the output is linearly related to the amount of charge placed on fd. once the signal has been sampled by the system electronics, the reset gate ( ? r) is clocked to remove the signal and fd is reset to the potential applied by vrd. more signal at the floating diffusion reduces the voltage seen at the output pin. in order to activate the output structure, an off ? chip load must be added to the vout pin of the device. see figure 3.
kaf ? 3200 www.onsemi.com 4 transfer efficiency test pixels and dummy pixels at the beginning of each line and at the end of each line are extra horizontal ccd pixels. these are a combination of pixels that are not associated with any vertical ccd register and two that are associated with extra photoactive vertical ccds. these are provided to give an accurate photosensitive signal that can be used to monitor the charge transfer efficiency in the serial (horizontal) register. they are arranged as follows beginning with the first pixel in each line. ? 8 dark, inactive pixels ? 1 photoactive ? 3 inactive pixels ? 34 dark reference pixels ? 2184 photoactive pixels ? 34 dark pixels ? 1 photo active pixel ? 2 inactive pixels image acquisitio n an electronic representation of an image is formed when incident photons falling on the sensor plane create electron ? hole pairs within the sensor. these photon ? induced electrons are collected locally by the formation of potential wells at each pixel site. the number of electrons collected is linearly dependent on light level and exposure time, and non ? linearly dependent on wavelength. when the pixel?s capacity is reached, excess electrons will leak into the adjacent pixels within the same column. this is termed blooming. during the integration period, the ? v1 and ? v2 register clocks are held at a constant (low) level. see figure 7. charge transpor t referring to figure 8, the integrated charge from each photo ? gate is transported to the output using a two ? step process. each line (row) of charge is first transported from the vertical ccds to the horizontal ccd register using the ? v1 and ? v2 register clocks. the horizontal ccd is presented a new line on the falling edge of ? v1 while ? h2 is held high. the horizontal ccd?s then transport each line, pixel by pixel, to the output structure by alternately clocking the ? h1 and ? h2 pins in a complementary fashion. on each falling edge of ? h1 a new charge packet is transferred onto a floating diffusion and sensed by the output amplifier. horizontal register output structure figure 3. output structure load diagram +15 v vout buffered output 2n3904 or equivalent 0.1 f 1 k r1 = 140 5 ma notes: 1. for operation of up to 10 mhz. 2. the value of r1 depends on the desired output current according the following formula: r1 = 0.7 / iout 3. the optimal output current depends on the capacitance that needs to be driven by the amplifier and the bandwidth required. 5 ma is recommended for capacitance of 12 pf and pixel rates up to 15 mhz.
kaf ? 3200 www.onsemi.com 5 physical description pin description and device orientation figure 4. pinout diagram pin 1 pixel 1,1 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 vguard vsub n/c vog vout vdd vrd vss n/c n/c n/c vsub vsub ? r ? h1 ? h2 ? v1 ? v1 ? v2 ? v2 ? v2 ? v2 ? v1 ? v1 note: the kaf ? 3200 is designed to be compatible with the kaf ? 1602 and kaf ? 0401 series of image sensors. the exception is the addition of two new vsub connections on pins 12 and 13. table 3. pin description pin name description 1 vog output gate 2 vout video output 3 vdd amplifier supply 4 vrd reset drain 5 ? r reset clock 6 vss amplifier supply return 7 ? h1 horizontal ccd clock ? phase 1 8 ? h2 horizontal ccd clock ? phase 2 9 n/c no connection (open pin) 10 n/c no connection (open pin) 11 n/c no connection (open pin) 12 vsub substrate (ground) pin name description 24 n/c no connection (open pin) 23 vguard substrate (ground) 22 ? v1 vertical ccd clock ? phase 1 21 ? v1 vertical ccd clock ? phase 1 20 ? v2 vertical ccd clock ? phase 2 19 ? v2 vertical ccd clock ? phase 2 18 ? v2 vertical ccd clock ? phase 2 17 ? v2 vertical ccd clock ? phase 2 16 ? v1 vertical ccd clock ? phase 1 15 ? v1 vertical ccd clock ? phase 1 14 vsub substrate (ground) 13 vsub substrate (ground)
kaf ? 3200 www.onsemi.com 6 imaging performance typical operational conditions all values measured at 25 c, and nominal operating conditions. these parameters exclude defective pixels. table 4. specifications description symbol min nom. max units notes verification plan saturation signal vertical ccd capacity horizontal ccd capacity output node capacity nsat 50,000 100,000 100,000 55,000 110,000 110,000 120,000 e ? /pixel 1 design 11 quantum efficiency with microlenses red blue green 55 70 80 %qe 3 design 11 design 11 design 11 photoresponse non ? linearity prnl 1 2 % 2 design 11 photoresponse non ? uniformity prnu 1 3 % 3 die 10 dark signal jdark 15 6 30 10 e ? / pixel / s pa/cm 2 4 die 10 dark signal doubling temperature 5 6 7 c design 11 dark signal non ? uniformity dsnu 15 30 e ? / pixel / s 5 die 10 dynamic range dr 72 77 db 6 design 118 charge transfer efficiency cte 0.99997 0.99999 die 10 output amplifier dc offset vodc vrd ? 2 vrd ? 1 vrd v 7 die 10 output amplifier bandwidth f ? 3db 45 mhz 8 design 11 output amplifier sensitivity vout/ne ? 18 20 v/e ? design 11 output amplifier output impedance zout 175 200 250 design 11 noise floor ne ? 7 12 electrons 9 die 10 1. for pixel binning applications, electron capacity up to 150,000 can be achieved with modified ccd inputs. each sensor may hav e to be optimized individually for these applications. some performance parameters may be compromised to achieve the largest signals. 2. worst case deviation from straight line fit, between 2% and 90% of nsat. 3. one sigma deviation of a 128 x 128 sample when ccd illuminated uniformly. 4. average of all pixels with no illumination at 25 c. 5. average dark signal of any of 11 x 8 blocks within the sensor. (each block is 128 x 128 pixels) 6. 20log (nsat / ne ? ) at nominal operating frequency and 25 c. 7. video level offset with respect to ground. 8. last output amplifier stage only. assumes 10 pf off ? chip load. 9. output noise at ? 10 c, 1 mhz operating frequency (15 mhz bandwidth), and tint = 0 (excluding dark signal). 10. a parameter that is measured on every sensor during production testing. 11. a parameter that is quantified during the design verification activity.
kaf ? 3200 www.onsemi.com 7 typical performance curves figure 5. typical spectral response kaf ? 3200 spectral response
kaf ? 3200 www.onsemi.com 8 defect definitions operating conditions all defect tests performed at t = 25 c. table 5. specifications classification point defect cluster defect column defect total zone a total zone a total zone a c2 10 5 4 2 0 0 figure 6. active pixel region 1,1 2184, 1 2184, 1472 1,1472 320, 216 1864,216 320,1256 1864,1256 zone a zone a = central 1544h x 1040v region point defects dark: a pixel that deviates by more than 6% from neighboring pixels when illuminated to 70% of saturation. ? or ? bright: a pixel with a dark current greater than 15000 e ? /pixel/sec at 25 c. cluster defect a grouping of not more than 5 adjacent point defects. column defect a grouping of > 5 contiguous point defects along a single column. a column containing a pixel with dark current > 12,000 e ? /pixel/sec (bright column). ? or ? a column column that does not meet the minimum vertical ccd charge capacity (low charge capacity column). ? or ? a column which loses more than 250 e ? under 2 ke ? illumination (trap defect). neighboring pixels the surrounding 128 x 128 pixels or 64 column/rows. defect separation column and cluster defects are separated by no less than two (2) pixels in any direction (excluding single pixel defects).
kaf ? 3200 www.onsemi.com 9 operation table 6. absolute maximum ratings description symbol minimum maximum units notes diode pin voltages vdiode 0 20 v 1, 2 gate pin voltages ? type 1 vgate1 ? 16 16 v 1, 3 gate pin voltages ? type 2 vgate2 0 16 v 1, 4 inter ? gate voltages vg ? g 16 v 5 output bias current i out ? 10 ma 6 output load capacitance cload 15 pf 6 operating temperature t op ? 60 60 c humidity rh 5 90 % 7 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. referenced to pin sub. 2. includes pins: vrd, vdd, vss, vout. 3. includes pins: ? v1, ? v2, ? h1, ? h2. 4. includes pins: vog, ? r. 5. voltage difference between overlapping gates. includes: ? v1 to ? v2, ? h1 to ? h2, ? v2 to ? h1, ? h2 to vog. 6. avoid shorting output pins to ground or any low impedance source during operation. 7. t = 25 c. excessive humidity will degrade mttf. table 7. dc bias operating conditions description symbol minimum nominal maximum units maximum dc current (ma) notes reset drain vrd 11.0 12.0 12.25 v 0.01 output amplifier return vss 2.5 3.0 3.2 v ? 0.5 output amplifier supply vdd 14.5 15.0 15.25 v i out substrate vsub 0 0 0 v 0.01 output gate vog 4.75 5.0 5.5 v 0.01 guard vguard 9.0 10.0 12.0 v video output current i out ? 5.0 ? 10.0 ma 1 1. an output load sink must be applied to vout to activate output amplifier ? see figure 3. ac operating conditions table 8. clock levels description symbol level minimum nominal maximum units effective capacitance vertical ccd clock ? phase 1 ? v1 low ? 10.0 ? 8.5 ? 8.5 v 5 nf (all ? v1 pins) vertical ccd clock ? phase 1 ? v1 high 0.0 2.0 3.0 v 5 nf (all ? v1 pins) vertical ccd clock ? phase 2 ? v2 low ? 10.0 ? 8.5 ? 8.5 v 5 nf (all ? v2 pins) vertical ccd clock ? phase 2 ? v2 high 0.0 2.0 3.0 v 5 nf (all ? v2 pins) horizontal ccd clock ? phase 1 ? h1 low ? 3.5 ? 3.0 ? 2.0 v 150 pf horizontal ccd clock ? phase 1 ? h1 high ? h1 low + 10 7.0 ? h1 low + 10 v 150 pf horizontal ccd clock ? phase 2 ? h2 low ? 3.5 ? 3.0 ? 2.0 v 150 pf horizontal ccd clock ? phase 2 ? h2 high ? h2 low + 10 7.0 ? h2 low + 10 v 150 pf reset clock ? r low 3.0 4.0 4.25 v 5 pf reset clock ? r high 10.0 11.0 11.25 v 5 pf 1. all pins draw less than 10 a dc current.
kaf ? 3200 www.onsemi.com 10 timing table 9. requirements and characteristics description symbol minimum nominal maximum units notes ? h1, ? h2 clock frequency f h 10 12 mhz 1, 2, 3 pixel period (1 count) t e 67 100 ns ? h1, ? h2 setup time t ? hs 0.5 1 s ? v1, ? v2 clock pulse width t ? v 4 5 s 2 reset clock pulse width t ? r 5 20 ns 4 readout time t readout 252.5 366.3 ms 5 integration time t int 6 line time t line 167.2 242.6 s 7 1. 50% duty cycle values. 2. cte may degrade above the nominal frequency. 3. rise and fall times (10/90% levels) should be limited to 5 ? 10% of clock period. cross ? over of register clocks should be between 40 ? 60% of amplitude. 4. ? r should be clocked continuously. 5. t readout = (1510 * t line ) 6. integration time is user specified. longer integration times will degrade noise performance due to dark signal fixed pattern and shot noise. 7. t line = (3 * t ? v ) + t ? hs + (2267) + t e ? frame timing figure 7. frame timing line 1 2 1509 1510 1 frame = 1510 lines tint ? v1 ? v2 ? h1 ? h2 t readout
kaf ? 3200 www.onsemi.com 11 line timing (each output) figure 8. line timing vout vsat vdark vsub vodc 1 count te 1 line 2267 counts te vpix line timing detail pixel timing detail ? v1 ? v2 ? h1 ? h2 ? r t ? hs t ? v t ? v ? r ? h1 ? h2 t ? r figure 9. timing diagrams photoactive pixels dark reference pixels dummy pixels 1 ? 12 13 ? 46 2231 ? 2264 vsat saturated pixel video output signal vdark video output signal in no light situation, not zero due to jdark vpix pixel video output signal level, more electrons =more negative * vodc video level offset with respect to vsub vsub analog ground * see image aquisition section (page 4) 47 ? 2230 2265 ? 2267 line content note: the kaf ? 3200 was designed to be compatible with the kaf ? 1602 and kaf ? 0401 series of image sensors. please note that the polarities of the two ? phase clocks have been swapped on the kaf ? 3200 compared to the kaf ? 1602 and kaf ? 0401.
kaf ? 3200 www.onsemi.com 12 storage and handling table 10. storage conditions description symbol minimum maximum units notes storage temperature t st ? 20 80 c 1 humidity rh 5 90 % 2 1. storage toward the maximum temperature will accelerate color filter degradation. 2. t = 25 c. excessive humidity will degrade mttf. for information on esd and cover glass care and cleanliness, please download the image sensor handling and best practices application note (an52561/d) from www.onsemi.com . for information on soldering recommendations, please download the soldering and mounting techniques reference manual (solderrm/d) from www.onsemi.com . for quality and reliability information, please download the quality & reliability handbook (hbd851/d) from www.onsemi.com . for information on device numbering and ordering codes, please download the device nomenclature technical note (tnd310/d) from www.onsemi.com . for information on standard terms and conditions of sale, please download terms and conditions from www.onsemi.com .
kaf ? 3200 www.onsemi.com 13 mechanical information completed assembly figure 10. completed assembly (1 of 2)
kaf ? 3200 www.onsemi.com 14 figure 11. completed assembly (2 of 2)
kaf ? 3200 www.onsemi.com 15 ar cover glass transmission figure 12. antireflective cover glass transmission 0 10 20 30 40 50 60 70 80 90 100 300 400 500 600 700 800 900 % transmission wavelength (nm) %transmission of ar cover glass on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warrant y, representation or guarantee regarding the suitability of it s products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 kaf ? 3200/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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